A NOVEL TECHNIQUE FOR INVESTIGATION OF LUMINESCENCE PROPERTIES OF GA_1-XIN_XP LPE LAYERS WITH A SMALL IN CONTENTKANIEWSKI J; WARMINSKI T; BUGAJSKI M et al.1981; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1981; VOL. 14; NO 2; PP. 127-134; H.T. 1; BIBL. 10 REF.Article

OPTICALLY PUMPED LASER ACTION AT 77K OF INGAP/INGAAIP DOUBLE HETEROSTRUCTURES GROWN BY MBEASAHI H; KAWAMURA Y; NAGAI H et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 2; PP. 62-63; BIBL. 5 REF.Article

STRONG ELECTRON-PHONON INTERACTION EFFECTS IN MODULATED TRANSIENT REFLECTANCE SPECTRA OF GA₅₀IN₅₀PSUGAI S; HARRIS JH; NURMIKKO AV et al.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 43; NO 12; PP. 913-916; BIBL. 13 REF.Article

ON STRUCTURAL ETCHING OF GAP AND (GA, IN)P.ROSIN H; FREYDANK G.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 32; NO 1; PP. 133-138; ABS. ALLEM.; BIBL. 19 REF.Article

LIQUID PHASE EPITAXIAL GROWTH OF GA_XIN_1-XPSTRINGFELLOW GB; LINDQUIST PF; BURMEISTER RA et al.1972; J. ELECTRON. MATER.; U.S.A.; DA. 1972; VOL. 1; NO 4; PP. 437-457; BIBL. 2 P. 1/2Serial Issue

INP-IN_1-XGA_XAS_YP_1-Y EMBEDDED MESA STRIPE LASERSPRINCE FC; PATEL NB; BULL DJ et al.1980; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1980; VOL. 16; NO 10; PP. 1034-1038; BIBL. 23 REF.Article

OPTICALLY PUMPED LASER ACTION AT 77 K IN GAAS/GAINP DOUBLE HETEROSTRUCTURES GROWN BY MOLECULAR BEAM EPITAXYSCOTT GB; ROBERTS JS; LEE RF et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 1; PP. 30-32; BIBL. 14 REF.Article

ELABORATION DE COUCHES GA_XIN_1-XP EPITAXEES ET CARACTERISATIONS ELECTROCHIMIQUES = ELABORATION OF GA_XIN_1-XP EPITAXIC LAYERS AND ELECTROCHEMICAL CHARACTERISTICSETCHEBERRY A.1980; ; FRA; DA. 1980; 116 P.-PL.; 30 CM; BIBL. 22 REF.; TH. 3E CYCLE: SCI./PARIS 7/1980Thesis

SUSCEPTIBILITE MAGNETIQUE DE SOLUTIONS SOLIDES BASEES SUR LES COMPOSES III-V ET CARACTERE DE LEUR LIAISON CHIMIQUEVYITKYINA TS Z.1981; VESCI AKAD. NAVUK BSSR, SER. FIZ.-MAT. NAVUK; ISSN 0002-3574; BYS; DA. 1981; NO 5; PP. 105-112; ABS. ENG; BIBL. 18 REF.Article

GAINASP/INP DH LASERS WITH A CHEMICALLY ETCHED FACETIGA K; POLLACK MA; MILLER BI et al.1980; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1980; VOL. 16; NO 10; PP. 1044-1047; BIBL. 17 REF.Article

DIFFUSION DE LA LUMIERE PAR LES POLARITONS PHONONIQUES DANS LES CRISTAUX MIXTES IN_1-XGA_XPBAJRAMOV V KH; NEGODUJKO VK; TOPOROV VV et al.1981; Z. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1981; VOL. 51; NO 11; PP. 2439-2441; BIBL. 3 REF.Article

A SCANNING ELECTRON MICROSCOPE STUDY OF IN_1-XGA_XP.VORONIN VA; STEWART WD JR; MARSHALL GW et al.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 12; PP. 1657-1661; BIBL. 8 REF.Article

LIQUID PHASE EPITAXIAL GROWTH AND PHOTOLUMINESCENCE CHARACTERIZATION OF LASER-QUALITY (100) IN_1-XGA_XP.HITCHENS WR; HOLONYAK N JR; LEE MH et al.1974; J. CRYST. GROWTH; NETHERL.; DA. 1974; VOL. 27; PP. 154-165; BIBL. 27 REF.Article

680-nm band GaInP/AlGaInP tapered stripe laserIKEDA, M; SATO, H; OHATA, T et al.Applied physics letters. 1987, Vol 51, Num 20, pp 1572-1573, issn 0003-6951Article

Pressure and temperature tuning of red laser diodes towards yellow and greenBOHDAN, Roland; YVONYAK, Yurij; MROZOWICZ, Milan et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 8, pp 1841-1844, issn 1862-6300, 4 p.Article

Observations of room-temperature excitons in InGaP/InGaAIP MQW structuresTANAKA, H; KAWAMURA, Y; ASAHI, H et al.Electronics Letters. 1987, Vol 23, Num 4, pp 166-168, issn 0013-5194Article

PHOTOLUMINESCENCE PROCESSES OF ZN-DOPED IN_1-X GA_XP WITH 0.6<X<1.0KATO T; MATSUMOTO T; ISHIDA T et al.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 1; PP. 100-103; BIBL. 26 REF.Article

TRANSITIONS RESONNANTES A DEUX SPINS DE NOYAUX OPTIQUEMENT ORIENTES DANS LE RESEAU D'UN SEMICONDUCTEURKALEVICH VK; KULIKOV VD; MERKULOV IA et al.1982; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1982; VOL. 24; NO 7; PP. 2098-2104; BIBL. 20 REF.Article

ELECTRONIC STRUCTURE OF PSEUDOBINARY SEMICONDUCTOR ALLOYS AL_XGA_1-XAS, GAP_XAS_1-X, AND GA_XIN_1-XPCHEN AB; SHER A.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 10; PP. 5360-5374; BIBL. 68 REF.Article

PHONON REPLICAS IN MIXED CRYSTALSSCHMELTZER D; BESERMAN R.1981; J. PHYS. C: SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1981; VOL. 14; NO 3; PP. 273-281; BIBL. 27 REF.Article

RELATION BETWEEN THE COMMON ANION RULE AND THE DEFECT MODEL OF SCHOTTKY BARRIER FORMATIONDAW MS; SMITH DL.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 37; NO 3; PP. 205-208; BIBL. 13 REF.Article

DIFFUSION RAMAN DE LA LUMIERE AU PREMIER ORDRE DUE AU DESORDRE DANS LE DOMAINE DES VIBRATIONS ACOUSTIQUES ET DIFFUSION DE LA LUMIERE AU SECOND ORDRE DANS IN_1-XGA_XPBAJRAMOV B KH; VISHNEVSKIJ VN; DEMCHUK MI et al.1981; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1981; VOL. 23; NO 1; PP. 23-31; BIBL. 33 REF.Article

ETUDE PAR ABSORPTION OPTIQUE DES INHOMOGENEITES DE MONOCRISTAUX SEMICONDUCTEURS.LEYRAL P.1975; LYON; DA. 1975; PP. 1-91; BIBL. 3 P.; (THESE DOCT. 3E. CYCLE, SPEC. PHYS. SPECTRON.; CLAUDE BERNARD LYON)Thesis

POSTGROWTH HEAT-TREATMENT EFFECTS IN HIGH-PURITY LIQUID-PHASE-EPITAXIAL IN_0.53GA_0.47ASRAO MV; BHATTACHARYA PK.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 6; PP. 196-197; BIBL. 7 REF.Article

CALCULATION OF THE ELECTRONIC PROPERTIES OF PSEUDO-BINARY SEMICONDUCTOR ALLOYSCHEN AB; SHER A.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 10; PP. 5645-5648; BIBL. 22 REF.Article